• DocumentCode
    1063530
  • Title

    Two-dimensional effect in high-density SPS charge transfer

  • Author

    Lee, Hsing-San

  • Author_Institution
    IBM General Technology Division, Essex Junction, VT
  • Volume
    26
  • Issue
    4
  • fYear
    1979
  • fDate
    4/1/1979 12:00:00 AM
  • Firstpage
    587
  • Lastpage
    588
  • Abstract
    The incomplete charge transfer associated with serial-to-parallel and parallel-to-serial SPS organization in high-density arrays is identified as being due to a narrow-width-induced well-reduction effect. It is suggested in this note that the channel widths be kept the same for serial-to-parallel corner turning but the output serial channel width be widened for parallel-to-serial transfer turning.
  • Keywords
    Charge coupled devices; Charge transfer; Clocks; Distributed computing; Electrodes; Potential well; Turning; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19463
  • Filename
    1480041
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1063530