• DocumentCode
    1063537
  • Title

    Tin Whisker Electrical Short Circuit Characteristics—Part II

  • Author

    Courey, Karim J. ; Asfour, Shihab S. ; Onar, Arzu ; Bayliss, Jon A. ; Ludwig, Lawrence L. ; Wright, Maria C.

  • Author_Institution
    Orbiter Sustaining Eng. Office, Kennedy Space Center, Kennedy Space Center, FL
  • Volume
    32
  • Issue
    1
  • fYear
    2009
  • Firstpage
    41
  • Lastpage
    48
  • Abstract
    Existing risk simulations make the assumption that when a free tin whisker has bridged two adjacent exposed electrical conductors, the result is an electrical short circuit. This conservative assumption is made because shorting is a random event that has an unknown probability associated with it. Note however that due to contact resistance, electrical shorts may not occur at lower voltage levels. In our first paper, we developed an empirical probability model for tin whisker shorting. In this paper, we develop a more comprehensive empirical model using a refined experiment with a larger sample size, in which we studied the effect of varying voltage on the breakdown of the contact resistance which leads to a short circuit. From the resulting data, we estimated the probability distribution of an electrical short, as a function of voltage. In addition, the unexpected polycrystalline structure seen in the focused ion beam (FIB) cross section in the first experiment was confirmed in this experiment using transmission electron microscopy (TEM). The FIB was also used to cross section two card guides to facilitate the measurement of the grain size of each card guide´s tin plating to determine its finish.
  • Keywords
    contact resistance; focused ion beam technology; grain size; tin; transmission electron microscopy; whiskers (crystal); TEM; contact resistance; electrical conductors; electrical short circuit; focused ion beam cross section; grain size; polycrystalline structure; tin whisker electrical short circuit; transmission electron microscopy; voltage levels; Breakdown voltage; Circuit simulation; Conductors; Contact resistance; Electron beams; Ion beams; Probability distribution; Size measurement; Tin; Transmission electron microscopy; Contact resistance; focused ion beam (FIB); short circuit; tin whiskers; transmission electron microscopy (TEM);
  • fLanguage
    English
  • Journal_Title
    Electronics Packaging Manufacturing, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1521-334X
  • Type

    jour

  • DOI
    10.1109/TEPM.2008.2009224
  • Filename
    4747414