DocumentCode :
1063539
Title :
RF noise in 0.18-μm and 0.13-μm MOSFETs
Author :
Huang, C.H. ; Lai, C.H. ; Hsieh, J.C. ; Liu, J. ; Chin, A.
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume :
12
Issue :
12
fYear :
2002
Firstpage :
464
Lastpage :
466
Abstract :
Studied the gate finger number and gate length dependence on minimum noise figure (NFmin) in deep submicrometer MOSFETs. A lowest NFmin of 0.93 dB is measured in 0.18-μm MOSFET at 5.8 GHz as increasing finger number to 50 fingers, but increases abnormally when above 50. The scaling gate length to 0.13 μm shows larger NFmin than the 0.18-μm case at the same finger number. From the analysis of a well-calibrated device model, the abnormal finger number dependence is due to the combined effect of reducing gate resistance and increasing substrate loss as increasing finger number. The scaling to 0.13-μm MOSFET gives higher NFmin due to the higher gate resistance and a modified T-gate structure proposed to optimize the NFmin for further scaling down of the MOSFET.
Keywords :
MOS integrated circuits; MOSFET; VLSI; field effect MMIC; microwave field effect transistors; semiconductor device models; semiconductor device noise; 0.13 micron; 0.18 micron; 0.93 dB; 5.8 GHz; RF noise; T-gate structure; abnormal finger number dependence; deep submicrometer MOSFETs; gate finger number; gate length dependence; gate resistance; minimum noise figure; substrate loss; well-calibrated device model; Active noise reduction; Fingers; Gallium arsenide; Ion implantation; MOSFETs; Noise figure; Probes; Radio frequency; Very large scale integration; Wireless communication;
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2002.805930
Filename :
1146687
Link To Document :
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