DocumentCode
1063548
Title
Flip Chip Bonding of 68 
68 MWIR LED Arrays
Author
Das, Naresh Chandra ; Taysing-Lara, Mónica ; Olver, Kimberley Anderson ; Kiamilev, Fouad ; Prineas, J.P. ; Olesberg, J.T. ; Koerperick, E.J. ; Murray, L.M. ; Boggess, Tom F.
Author_Institution
Microphotonics Branch, Army Res. Lab., Adelphi, MD
Volume
32
Issue
1
fYear
2009
Firstpage
9
Lastpage
13
Abstract
The flip chip bonding process is optimized by varying the bonding pressure, temperature, and time. The 68times68 mid wave infrared (MWIR) LED array was hybridized onto Si-CMOS driver array with same number of pixels. Each pixel has two indium bumps, one for cathode and another for anode. Both LED array and CMOS drivers have 15-mum-square Indium bump contact pads. We used Karl Suss FC150 flip chip machine for bonding of CMOS driver array onto LED array. From the LED current-voltage characteristics, it is concluded that the optimized flip chip bonding process results in uniform contact and very low contact resistance. Both electrical and optical characteristics of LED array after flip chip bonding are presented.
Keywords
CMOS integrated circuits; contact resistance; elemental semiconductors; flip-chip devices; integrated circuit bonding; light emitting diodes; silicon; CMOS driver array; LED arrays; Si; bonding pressure; bonding temperature; bonding time; contact resistance; current-voltage characteristics; flip chip bonding; indium bumps; Anodes; Bonding processes; Cathodes; Contacts; Current-voltage characteristics; Flip chip; Indium; Light emitting diodes; Optical arrays; Temperature; CMOS drivers; contact resistance; flip chip bonding; led array;
fLanguage
English
Journal_Title
Electronics Packaging Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
1521-334X
Type
jour
DOI
10.1109/TEPM.2008.2005062
Filename
4747415
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