Short-channel effect immunity and current capability of sub-0.1-micron MOSFET´s using a recessed channel

Author

Bricout, Paul-Henri ; Dubois, Emmanuel

Author_Institution

Inst. Electronique et de Microelectronique du Nord, Lille, France

Volume

43

Issue

8

fYear

1996

fDate

8/1/1996 12:00:00 AM

Firstpage

1251

Lastpage

1255

Abstract

Sub-0.1-μm planar and gate recessed MOSFET´s are investigated using both drift-diffusion and Monte Carlo simulations. In nonplanar devices, the influence of the gate corner explains that the threshold voltage roll-off can be almost suppressed. A steeper subthreshold slope (low swing) is also obtained for a channel length shorter than 50 nm when the recessed channel MOSFET is compared to its planar counterpart. The influence of the corner effect on high-current performances is also considered in relation with the electric field profile along the Si/SiO ₂ interface

Keywords

MOSFET; Monte Carlo methods; semiconductor device models; surface potential; 2.5 nm to 0.5 mum; Monte Carlo simulation; Si-SiO₂; Si/SiO₂ interface; channel length; current capability; drift-diffusion model; electric field profile; gate corner; high-current performance; nonplanar devices; planar gate recessed MOSFET; recessed channel MOSFET; short-channel effect immunity; subthreshold slope; subthreshold swing; surface potential; threshold voltage roll-off suppression; Degradation; Electrons; Helium; Hot carriers; MOS devices; MOSFET circuits; Parasitic capacitance; Power dissipation; Threshold voltage; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.506776

Filename

506776