Title :
A SiGe MMIC 6-bit PIN diode phase shifter
Author :
Teshiba, Mary ; Van Leeuwen, Robert ; Sakamoto, Glenn ; Cisco, Terry
Author_Institution :
Raytheon Electron. Syst., El Segundo, CA, USA
Abstract :
A 6-bit PIN diode phase shifter has been successfully demonstrated at microwave frequencies in a SiGe bipolar technology. A post-silicon polymer dielectric interconnect technology is implemented to achieve low loss microstrip structures on the silicon substrate. The monolithic microwave integrated circuit exhibits flat phase shift, low VSWR, and low insertion loss variation, over the 7- to 11-GHz band. This phase shifter demonstrates the feasibility of integrating SiGe technology into microwave systems.
Keywords :
Ge-Si alloys; MMIC phase shifters; bipolar MMIC; microstrip circuits; p-i-n diodes; semiconductor materials; silicon; 6 bit; 7 to 11 GHz; MMIC bipolar technology; PIN diode phase shifter in; Si; Si substrate; SiGe; SiGe MMIC; low loss microstrip structures; monolithic microwave IC; monolithic microwave integrated circuit; post-Si polymer dielectric interconnect technology; Dielectric losses; Dielectric substrates; Germanium silicon alloys; Integrated circuit technology; MMICs; Microwave frequencies; Microwave technology; Phase shifters; Polymers; Silicon germanium;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2002.805534
