Title :
Unified physical I-V model including self-heating effect for fully depleted SOI/MOSFET´s
Author :
Cheng, Yuhua ; Fjeldly, Tor A.
Author_Institution :
Dept. of Phys. Electron., Norwegian Inst. of Technol., Trondheim, Norway
fDate :
8/1/1996 12:00:00 AM
Abstract :
A physically based analytical I-V model that includes self-heating effect (SHE) is presented for fully depleted SOI/MOSFET´s. The incorporation of SHE is done self-consistently in a fully closed form, making the model very suitable for use in circuit simulators. The model also accounts for the drain induced conductivity enhancement (DICE) and drain induced barrier lowering (DIBL), channel length modulation (CLM), as well as parasitic series resistances (PSR). Another advantage is the unified form of the model that allows us to describe the subthreshold, the near-threshold and the above-threshold regimes of operation in one continuous expression. A continuous transition of current and conductance from the linear to the saturation regimes is also assured. The model shows good agreement with measured data for a wide range of channel lengths (down to 0.28 μm) and film thicknesses (94 nm-162 nm)
Keywords :
MOSFET; SPICE; circuit analysis computing; semiconductor device models; silicon-on-insulator; 94 to 162 nm; above-threshold regime; channel length modulation; channel lengths; circuit simulators; continuous transition; drain induced barrier lowering; drain induced conductivity enhancement; film thicknesses; fully closed form; fully depleted SOI/MOSFET; near-threshold regime; parasitic series resistances; saturation regimes; self-heating effect; subthreshold regime; unified physical I-V model; Analytical models; Circuit analysis computing; Circuit simulation; Computational modeling; Electrical resistance measurement; Length measurement; MOSFET circuits; Temperature dependence; Thermal conductivity; Thickness measurement;
Journal_Title :
Electron Devices, IEEE Transactions on