Title :
A simplified 2-D analytic model for the threshold-voltage of fully depleted short gate-length Si-SOI MESFET´s
Author_Institution :
Inst. for Math. & Applications, Minnesota Univ., Minneapolis, MN
fDate :
8/1/1996 12:00:00 AM
Abstract :
We present a simplified form of the exact solution of the 2-D Poisson equation of fully depleted Si-SOI MESFET´s by Hou and Wu (1995). The major improvement is that the Fourier coefficient of the electric displacement at the Si-SiO2 interface is given in (finite) closed form, rather than infinite series. Their 2-D analytic model for the threshold-voltage can be simplified accordingly
Keywords :
Schottky gate field effect transistors; elemental semiconductors; semiconductor device models; silicon; silicon-on-insulator; 2D analytic model; Fourier coefficient; Poisson equation; Si-SiO2; Si-SiO2 interface; electric displacement; fully depleted short gate-length Si-SOI MESFET; threshold voltage; Boundary conditions; CMOS technology; Channel bank filters; Doping profiles; Green´s function methods; Implants; MESFETs; Medical simulation; Semiconductor device modeling; Solid modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
