DocumentCode
1063761
Title
Planar edge termination for 4H-silicon carbide devices
Author
Alok, Dev ; Raghunathan, R. ; Baliga, B.J.
Author_Institution
Power Semicond. Res. Center, North Carolina State Univ., Raleigh, NC, USA
Volume
43
Issue
8
fYear
1996
fDate
8/1/1996 12:00:00 AM
Firstpage
1315
Lastpage
1317
Abstract
In this paper, it is demonstrated that the edge termination for 6H-SiC based upon self-aligned implantation of a neutral species on the edges of devices to form an amorphous layer can also be applied to 4H-SiC inspite of differences in their band structures. With this termination formed using argon implantation on Schottky barrier diodes, breakdown voltages were found to exceed those reported for mesa edge terminated diodes. Based upon this, it can be concluded that nearly ideal breakdown voltage is also achievable in 4H-SiC devices by using this planar edge termination
Keywords
Schottky diodes; ion implantation; semiconductor materials; silicon compounds; 4H-silicon carbide device; Ar; Schottky barrier diode; SiC; amorphous layer; band structure; breakdown voltage; planar edge termination; self-aligned implantation; Boundary conditions; Boundary value problems; Green´s function methods; MESFETs; Machinery; Piecewise linear techniques; Schottky diodes; Semiconductor diodes; Semiconductor materials; Silicon carbide;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.506789
Filename
506789
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