A study of methods for moving particles in RF processing plasmas

Methods for moving charged particles in RF processing plasmas are investigated. These methods include varying RF power, varying chamber pressure, attraction and repulsion by an electrostatic probe, and movement with magnetic fields. Varying RF power changes the depth of the potential wells where particles are trapped. The RF power affects shape and location of the traps and the bulk plasma potential. Increasing the chamber pressure moves the sheath edge closer to the wafer being processed. Since particle traps are found at the plasma sheath edge increasing the chamber pressure will move the particle traps (and any trapped particles) closer to the wafer being processed. The Langmuir probe can repel particles when under negative bias and attract them when positively biased. This probe can also distort the sheath edge when the tip resides within the sheath. Applying a magnetic field can change the characteristics of the particle traps and produce a force on the charged dust particles