DocumentCode
1063901
Title
Theoretical considerations on the effects of bulk charge on VMOST characteristics
Author
Greeneich, Edwin W.
Author_Institution
Motorola, Inc., Phoenix, AZ
Volume
26
Issue
5
fYear
1979
fDate
5/1/1979 12:00:00 AM
Firstpage
807
Lastpage
810
Abstract
A linear approximation to the bulk-charge effect in short-channel VMOS devices is presented which allows for an explicit solution to the volt-ampere characteristics in the presence of velocity saturation effects. The results are shown to agree closely with the more complex exact analysis.
Keywords
Charge carrier density; Charge carrier processes; Delay effects; Electrical resistance measurement; Electron devices; Ionization; Length measurement; Silicon; Space charge; Time measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19498
Filename
1480076
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