Title :
Peripheral emitter—Base junction capacitance in bipolar transistors
Author :
Roulston, David J. ; Kumar, R.C.
Author_Institution :
University of Waterloo, Waterloo, Ont., Canada
fDate :
5/1/1979 12:00:00 AM
Abstract :
The emitter-base peripheral (sidewall) capacitance of double-diffused silicon bipolar transistors is computed at zero bias. Results are presented in such a way as to provide useful design data.
Keywords :
Bipolar transistors; Capacitance; Computer peripherals; Doping; Impurities; Microwave communication; Microwave transistors; Niobium; Poisson equations; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19499
