Title :
Fast characterization of thin semiconductor layers on high-resistivity substrates
Author :
Donzelli, G.P. ; Guarini, G. ; Svelto, V.
Author_Institution :
CISE SpA-Segrate, Milan, Italy
fDate :
5/1/1979 12:00:00 AM
Abstract :
A three-Schottky-barrier FET structure is proposed for the measurement of carrier concentration and drift mobility profiles in thin epitaxial layers on semi-insulating substrates. The advantages of this structure are a simple geometry and a fast and nondestructive technological process. Typical results are also shown for GaAs layers.
Keywords :
Bipolar transistors; Capacitance; Electron devices; Microwave transistors; Niobium; P-n junctions; Semiconductor device doping; Semiconductor impurities; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19500
