• DocumentCode
    1063915
  • Title

    Fast characterization of thin semiconductor layers on high-resistivity substrates

  • Author

    Donzelli, G.P. ; Guarini, G. ; Svelto, V.

  • Author_Institution
    CISE SpA-Segrate, Milan, Italy
  • Volume
    26
  • Issue
    5
  • fYear
    1979
  • fDate
    5/1/1979 12:00:00 AM
  • Firstpage
    811
  • Lastpage
    815
  • Abstract
    A three-Schottky-barrier FET structure is proposed for the measurement of carrier concentration and drift mobility profiles in thin epitaxial layers on semi-insulating substrates. The advantages of this structure are a simple geometry and a fast and nondestructive technological process. Typical results are also shown for GaAs layers.
  • Keywords
    Bipolar transistors; Capacitance; Electron devices; Microwave transistors; Niobium; P-n junctions; Semiconductor device doping; Semiconductor impurities; Substrates; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19500
  • Filename
    1480078
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1063915