A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part I (high frequencies)

In this paper, we propose a new extraction method of radiation-induced oxide-trap density (ΔN_ot), called Oxide-Trap based on Charge-Pumping (OTCP). This part presents the HF-OTCP method, which relies on high-frequency (HF) standard charge-pumping measurement. By applying an HF gate voltage signal, we avoid the border-trap effect in CP current (I_cp) measurements. Hence, I_cp will be only due to the interface-trap contribution. We establish, using the HF-OTCP method, that ΔN_ot is only dependent on ΔV_th (threshold voltage shift) and ΔI_cpm (increase of maximum CP current), where ΔI_cpm is caused by radiation-induced interface-trap increase (ΔN_it). We also clearly show that ΔV_th and ΔI_cpm can be obtained from lateral and vertical shifts of Elliot´s charge-pumping curves, respectively. Thus, this new procedure allows the determination of ΔN_ot without needing any additional techniques. Finally, this procedure can be used in rapid hardness assurance test to evaluate both radiation-induced oxide and interface traps.