• DocumentCode
    1063934
  • Title

    Double-velocity IMPATT diodes

  • Author

    Adlerstein, M.G. ; Statz, H.

  • Author_Institution
    Raytheon Company, Waltham, MA
  • Volume
    26
  • Issue
    5
  • fYear
    1979
  • fDate
    5/1/1979 12:00:00 AM
  • Firstpage
    817
  • Lastpage
    819
  • Abstract
    A new IMPATT diode structure is proposed. The device incorporates a heterojunction between materials having different electric field saturated carrier velocities. Analysis shows that such a diode can have significantly higher dc-to-microwave-power conversion efficiencies than conventional Read IMPATT diodes.
  • Keywords
    Anodes; Electrons; Frequency; Heterojunctions; Light emitting diodes; Microwave devices; Region 1; Schottky diodes; Solid state circuits; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19502
  • Filename
    1480080
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1063934