Title :
Double-velocity IMPATT diodes
Author :
Adlerstein, M.G. ; Statz, H.
Author_Institution :
Raytheon Company, Waltham, MA
fDate :
5/1/1979 12:00:00 AM
Abstract :
A new IMPATT diode structure is proposed. The device incorporates a heterojunction between materials having different electric field saturated carrier velocities. Analysis shows that such a diode can have significantly higher dc-to-microwave-power conversion efficiencies than conventional Read IMPATT diodes.
Keywords :
Anodes; Electrons; Frequency; Heterojunctions; Light emitting diodes; Microwave devices; Region 1; Schottky diodes; Solid state circuits; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19502
