A new oxide-trap based on charge-pumping (OTCP) extraction method for irradiated MOSFET devices: part II (low frequencies)

In this paper, the Oxide-Trap based on Charge-Pumping (OTCP) extraction method is extended from high frequencies (HFs) to low frequencies (LFs). As a consequence, the LF-OTCP method simultaneously senses both interface-trap and border-trap (switching oxide-trap) in charge-pumping (CP) current (I_cp) measurements. We have found that radiation-induced oxide-trap (ΔN_ot) is dependent on ΔV_th (threshold voltage shift), ΔI_cpm,h (augmentation of maximum CP current at high frequencies), and ΔI_cpm,l (augmentation of maximum CP current at low frequencies), where ΔI_cpm,h is caused by radiation-induced interface-trap increase (ΔN_it) and ΔI_cpm,l by both radiation-induced interface- and border-trap increases (ΔN_it) and (ΔN_bt), respectively. We have shown that ΔI_cpm,l and ΔI_cpm,h can be easily obtained from a vertical shift of the charge-pumping curve at low and high frequencies respectively, and ΔV_th from a lateral one.