DocumentCode
106395
Title
Prediction of Charged Device Model Peak Discharge Current for Microelectronic Components
Author
Shukla, Vineeta ; Boselli, G. ; Dissegna, Mariano ; Duvvury, Charvaka ; Sankaralingam, Rajkumar ; Rosenbaum, Elyse
Author_Institution
Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Volume
14
Issue
3
fYear
2014
fDate
Sept. 2014
Firstpage
801
Lastpage
809
Abstract
This paper presents a computationally efficient methodology to predict the peak current stress experienced by a microelectronic component during a field-induced charge device model (FICDM) electrostatic discharge test. The methodology is applied to a variety of IC components in different types of packages; the peak current values obtained from simulations agree well with those obtained from FICDM measurements.
Keywords
electrostatic discharge; integrated circuits; FICDM measurements; IC components; electrostatic discharge test; field-induced charge device model; microelectronic component; peak current stress prediction; peak discharge current; Bandwidth; Capacitance; Current measurement; Dielectrics; Discharges (electric); Integrated circuit modeling; Substrates; CDM; ESD; peak current stress;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2014.2342241
Filename
6862855
Link To Document