Development of flip-chip bonding technology for (Cd,Zn)Te

Author

Fiederle, Michael ; Braml, Heiko ; Fauler, Alex ; Giersch, Jürgen ; Ludwig, Jens ; Jakobs, Karl

Author_Institution

Freiburger Materialforschungszentrum, Albert-Ludwigs-Univ. Freiburg, Germany

Volume

51

Issue

4

fYear

2004

Firstpage

1799

Lastpage

1802

Abstract

A flip-chip bonding technology has been developed for CdTe and (Cd,Zn)Te X-ray detectors. The aim of this paper is to choose a suitable chip interconnection technique for the fabrication of X-ray pixel detectors to fit the material requirements of detector grade CdTe and (Cd,Zn)Te. The proposed method is based on a flexible process, which permits the use of an eutectic PbSn alloy with a photoresist mask. A photosensitive polymer acts as a passivation layer and solder stop mask on CdTe or (Cd,Zn)Te. The proposed process provides the opportunity to do all process steps "in-house.".

Keywords

X-ray detection; bonding processes; lead alloys; passivation; photoresists; position sensitive particle detectors; readout electronics; semiconductor counters; tin alloys; (Cd,Zn)Te X-ray detector; CdTe detector; PbSn; X-ray pixel detector; chip interconnection technique; eutectic PbSn alloy; flip-chip bonding technology; passivation layer; photoresist mask; photosensitive polymer; readout electronics; stop mask soldering; Bonding; Conductivity; Fabrication; Passivation; Polymers; Resists; Semiconductor materials; Stress; X-ray detection; X-ray detectors;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2004.832949

Filename

1323770