• DocumentCode
    1064122
  • Title

    Experimental and theoretical studies of I—V characteristics of zinc-doped silicon p-n junctions using the exact DC circuit model

  • Author

    Chan, Philip C. H. ; Sah, Chih-Tang

  • Author_Institution
    University of Illinois, Urbana, IL
  • Volume
    26
  • Issue
    6
  • fYear
    1979
  • fDate
    6/1/1979 12:00:00 AM
  • Firstpage
    937
  • Lastpage
    941
  • Abstract
    The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zinc-doped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward I-V characteristics are compared with experimental I-V over a wide range of temperatures, showing excellent agreement.
  • Keywords
    Current-voltage characteristics; Diodes; Equations; Equivalent circuits; Forward contracts; P-n junctions; Silicon; Steady-state; Temperature distribution; Zinc;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19521
  • Filename
    1480099
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1064122