DocumentCode :
1064122
Title :
Experimental and theoretical studies of I—V characteristics of zinc-doped silicon p-n junctions using the exact DC circuit model
Author :
Chan, Philip C. H. ; Sah, Chih-Tang
Author_Institution :
University of Illinois, Urbana, IL
Volume :
26
Issue :
6
fYear :
1979
fDate :
6/1/1979 12:00:00 AM
Firstpage :
937
Lastpage :
941
Abstract :
The exact distributed steady-state equivalent circuit model is used to calculate the forward current-voltage characteristics of zinc-doped p-n junction diodes. The experimental values of the Shockley-Read-Hall (SRH) coefficients at zinc centers in silicon and measured recombination center (zinc) density were used in the model. The theoretical forward 
characteristics are compared with experimental over a wide range of temperatures, showing excellent agreement.
characteristics are compared with experimental over a wide range of temperatures, showing excellent agreement.Keywords :
Current-voltage characteristics; Diodes; Equations; Equivalent circuits; Forward contracts; P-n junctions; Silicon; Steady-state; Temperature distribution; Zinc;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19521
Filename :
1480099
Link To Document :
