DocumentCode :
106413
Title :
Dual-band quadrature voltage-controlled oscillator using differential inner-diamond-structure switchable inductor
Author :
Tsai, Pei-kang ; Huang, Tingwen ; Chen, Yuanfeng
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
7
Issue :
6
fYear :
2013
fDate :
Nov-13
Firstpage :
368
Lastpage :
375
Abstract :
A dual-band quadrature voltage-controlled oscillator (QVCO) with high figure-of-merits (FOMs) and cost-area efficiency is presented by integrating with differential inner-diamond-structure switchable inductors which have improved performances. This proposed QVCO is fabricated in a 0.18-μm complementary metal-oxide semiconductor process with an active-region area of 0.61 mm2. The QVCO core totally consumes 6.8 mA from 1.8 V supply voltage. The frequency tuning ranges are 120 MHz (from 3.18 to 3.3 GHz) for the low-band and 500 MHz (from 6.94 to 7.44 GHz) for the high-band, while the tuning voltage rises from 0 to 1.8 V. The best phase noises with an offset frequency of 1 MHz from the oscillation frequency in the low- and high-bands are -121.9 and -117.5 dBc/Hz, respectively. The measured phase errors in both high-band and low-band are less than 1°. The calculated FOMs, no matter the switch is off or on, are better than -180 dBc/Hz.
Keywords :
CMOS integrated circuits; inductors; phase noise; power supply circuits; voltage-controlled oscillators; FOM; QVCO; complementary metal-oxide semiconductor process; cost-area efficiency; current 6.8 mA; differential inner-diamond-structure switchable inductors; dual-band quadrature voltage-controlled oscillator; frequency 120 MHz; frequency 500 MHz; frequency tuning ranges; high figure-of-merits; phase noises; size 0.18 mum; supply voltage; voltage 0 V to 1.8 V;
fLanguage :
English
Journal_Title :
Circuits, Devices & Systems, IET
Publisher :
iet
ISSN :
1751-858X
Type :
jour
DOI :
10.1049/iet-cds.2013.0098
Filename :
6673720
Link To Document :
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