DocumentCode
1064175
Title
The silicon cryosar at microwave frequencies
Author
Glasser, Lance A. ; Kyhl, Robert L.
Author_Institution
Massachusetts Institute of Technology, Cambridge, MA
Volume
26
Issue
6
fYear
1979
fDate
6/1/1979 12:00:00 AM
Firstpage
966
Lastpage
970
Abstract
Microwave and low-frequency measurements are reported on 
silicon cryosars fabricated with narrow intrinsic region widths. The low-frequency measurements include 
data with and without incident microwave power. The electric field required to cause impact ionization of the donors was found to be greater than 105V/m. The microwave measurements include a demonstration of mixing, harmonic mixing, and harmonic generation. Small-signal impedance measurements as a function of bias are reported at 1.33 and 3.05 GHz, and the diode noise temperature was measured to be 16 000 or 3000 K depending on bias polarity. Mobile electron lifetime is 10-10s.
silicon cryosars fabricated with narrow intrinsic region widths. The low-frequency measurements include data with and without incident microwave power. The electric field required to cause impact ionization of the donors was found to be greater than 105V/m. The microwave measurements include a demonstration of mixing, harmonic mixing, and harmonic generation. Small-signal impedance measurements as a function of bias are reported at 1.33 and 3.05 GHz, and the diode noise temperature was measured to be 16 000 or 3000 K depending on bias polarity. Mobile electron lifetime is 10-10s.Keywords
Diodes; Frequency conversion; Impact ionization; Impedance measurement; Microwave frequencies; Microwave measurements; Power measurement; Silicon; Temperature dependence; Temperature measurement;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19526
Filename
1480104
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