Title :
Lead—Lead telluride Schottky-barrier microstrip
Author :
Hsu, Tzu-Hwa ; White, Richard M.
Author_Institution :
Hewlett-Packard Company, Palo Alto, CA
fDate :
6/1/1979 12:00:00 AM
Abstract :
Observations of some interesting properties of the II-VI semiconductor PbTe result in the realization of a Pb-PbTe Schottky-barrier microstrip having a slowing factor as large as 450 for propagating electromagnetic waves. The properties of PbTe are briefly described, and the key features that produce a large slowing factor are explained. The theory of device operation at cryogenic temperatures is presented, along with details of device fabrication and actual device performance.
Keywords :
Electric breakdown; Electrons; Germanium; Ionization; Lead compounds; Microstrip; Microwave theory and techniques; Schottky diodes; Semiconductor diodes; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19527
