DocumentCode :
1064191
Title :
Noise in triode-like JFET´s
Author :
Takagi, Keiji ; Tazunegi, Kenji ; Van Der van der Ziel, A.
Author_Institution :
University of Minnesota, Minneapolis, MN
Volume :
26
Issue :
6
fYear :
1979
fDate :
6/1/1979 12:00:00 AM
Firstpage :
977
Lastpage :
980
Abstract :
Drain noise measurements on the triode-like JFET show that the limiting noise of this device is thermal noise. We find 
, where α is less than 2, which is smaller than in a vacuum triode. This device is, therefore, a low-noise device. The gate noise and the correlation susceptance were also measured. A theoretical analysis was carried out with a one-dimensional SCL current. The measured results agreed reasonably well with the theory. A two-dimensional analysis should be carried out in detail.
, where α is less than 2, which is smaller than in a vacuum triode. This device is, therefore, a low-noise device. The gate noise and the correlation susceptance were also measured. A theoretical analysis was carried out with a one-dimensional SCL current. The measured results agreed reasonably well with the theory. A two-dimensional analysis should be carried out in detail.Keywords :
Circuit noise; Density estimation robust algorithm; Electron tubes; Equations; Helium; Noise measurement; Semiconductor device noise; Semiconductor diodes; Voltage; White noise;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19528
Filename :
1480106
Link To Document :
