DocumentCode
1064191
Title
Noise in triode-like JFET´s
Author
Takagi, Keiji ; Tazunegi, Kenji ; Van Der van der Ziel, A.
Author_Institution
University of Minnesota, Minneapolis, MN
Volume
26
Issue
6
fYear
1979
fDate
6/1/1979 12:00:00 AM
Firstpage
977
Lastpage
980
Abstract
Drain noise measurements on the triode-like JFET show that the limiting noise of this device is thermal noise. We find 
, where α is less than 2, which is smaller than in a vacuum triode. This device is, therefore, a low-noise device. The gate noise and the correlation susceptance were also measured. A theoretical analysis was carried out with a one-dimensional SCL current. The measured results agreed reasonably well with the theory. A two-dimensional analysis should be carried out in detail.
, where α is less than 2, which is smaller than in a vacuum triode. This device is, therefore, a low-noise device. The gate noise and the correlation susceptance were also measured. A theoretical analysis was carried out with a one-dimensional SCL current. The measured results agreed reasonably well with the theory. A two-dimensional analysis should be carried out in detail.Keywords
Circuit noise; Density estimation robust algorithm; Electron tubes; Equations; Helium; Noise measurement; Semiconductor device noise; Semiconductor diodes; Voltage; White noise;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19528
Filename
1480106
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