DocumentCode :
1064196
Title :
Evanescent-coupled GaInNAsSb in-line fibre photodetectors
Author :
Yang, H. ; Khalili, A. ; Wistey, M. ; Harris, J.S.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
Volume :
1
Issue :
4
fYear :
2007
Firstpage :
175
Lastpage :
177
Abstract :
The authors report on in-line fibre photodetectors that can measure power transfer in an optical fibre without interruption of the optical beam, showing 80% external quantum efficiency at 1316 nm wavelength. A new type of structure is used that employs GaNAsSb barriers and GalnNAsSb quantum wells grown by molecular beam epitaxy on GaAs substrates at the centre of anti-resonant reflective optical waveguides to detect long wavelength optical signals without fibre interruption.
Keywords :
arsenic compounds; fibre optic sensors; gallium arsenide; gallium compounds; indium compounds; nitrogen compounds; photodetectors; power measurement; GaAs; GaInNAsSb; anti-resonant reflective optical waveguides; fibre interruption; in-line fibre photodetectors; molecular beam epitaxy; optical beam; optical fibre; optical signals; power transfer; quantum wells;
fLanguage :
English
Journal_Title :
Optoelectronics, IET
Publisher :
iet
ISSN :
1751-8768
Type :
jour
DOI :
10.1049/iet-opt:20060065
Filename :
4277179
Link To Document :
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