Title :
Current gain of shallow-junction lateral transistors
Author_Institution :
Technion-Israel Institute of Technology, Haifa, Israel
fDate :
6/1/1979 12:00:00 AM
Abstract :
Two-dimensional current flow in shallow-junction lateral transistors is analyzed. Emitter and base currents in stripe-geometry and circular devices are expressed in terms of a transform of the excess carrier concentration at the base surface. The dependence of current gain on device parameters is presented graphically.
Keywords :
Boundary conditions; Equations; Geometry; P-n junctions; Solid modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19530
