• DocumentCode
    1064205
  • Title

    Current gain of shallow-junction lateral transistors

  • Author

    Kolodny, A.

  • Author_Institution
    Technion-Israel Institute of Technology, Haifa, Israel
  • Volume
    26
  • Issue
    6
  • fYear
    1979
  • fDate
    6/1/1979 12:00:00 AM
  • Firstpage
    987
  • Lastpage
    989
  • Abstract
    Two-dimensional current flow in shallow-junction lateral transistors is analyzed. Emitter and base currents in stripe-geometry and circular devices are expressed in terms of a transform of the excess carrier concentration at the base surface. The dependence of current gain on device parameters is presented graphically.
  • Keywords
    Boundary conditions; Equations; Geometry; P-n junctions; Solid modeling;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19530
  • Filename
    1480108
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1064205