DocumentCode
1064213
Title
Silicon p-i-n photodetectors with integrated transistor amplifiers
Author
Hata, Susumu ; Sugeta, Takayuki ; Mizushima, Yoshihiko ; Asatani, Koichi ; Nawata, Kiyoshi
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
Volume
26
Issue
6
fYear
1979
fDate
6/1/1979 12:00:00 AM
Firstpage
989
Lastpage
991
Abstract
A novel silicon photodetector is presented, incorporating transistor gain in a p-i-n photodiode and its performance is analyzed. Gain and noise power frequency characteristics are analytically derived in terms of an equivalent circuit. These analytical results are in good agreement with experimental results. Noise power is estimated and it is shown that, in the video frequency range, the S/N ratio is far superior to that of APD for relatively large signal levels. Detector operational features are described.
Keywords
Circuit analysis; Equivalent circuits; Frequency estimation; Noise level; PIN photodiodes; Performance analysis; Performance gain; Photodetectors; Signal to noise ratio; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19531
Filename
1480109
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