Picosecond optical sampling of GaAs integrated circuits

Author

Weingarten, Kurt J. ; Rodwel, M.J.W. ; Bloom, David M.

Author_Institution

Edward L. Ginzton Lab., Stanford Univ., CA, USA

Volume

24

Issue

2

fYear

1988

Firstpage

198

Lastpage

220

Abstract

Direct electrooptic sampling is a noncontact optical-probing technique for measuring with picosecond time resolution the voltage waveforms at internal nodes within GaAs integrated circuits. The factors contributing to system bandwidth, sensitivity, spatial resolution, and circuit perturbation are discussed, as are the circuit requirements for realistic testing of analog and digital devices. Measurements of high-speed GaAs integrated circuits are presented, including time-domain waveform and timing measurements of digital and analog circuits and frequency-domain transfer function measurements of microwave circuits and transmission structures.<>

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated circuit testing; microwave integrated circuits; GaAs integrated circuits; III-V semiconductor; analog devices; circuit perturbation; circuit requirements; digital devices; direct electrooptic sampling; frequency-domain transfer function measurements; high-speed; internal nodes; microwave circuits; noncontact optical-probing technique; picosecond optical sampling; picosecond time resolution; sensitivity; spatial resolution; system bandwidth; testing; time-domain waveform; timing measurements; transmission structures; voltage waveforms; Frequency measurement; Gallium arsenide; High speed optical techniques; Integrated circuit measurements; Integrated optics; Microwave measurements; Optical sensors; Photonic integrated circuits; Sampling methods; Spatial resolution;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.115

Filename

115