Title :
Quantum Well and Dot Self-Aligned Stripe Lasers Utilizing an InGaP Optoelectronic Confinement Layer
Author :
Groom, Kristian M. ; Stevens, Benjamin J. ; Assamoi, P. Joel ; Roberts, John S. ; Hugues, Maxime ; Childs, David T D ; Alexander, Ryan R. ; Hopkinson, Mark ; Helmy, Amr S. ; Hogg, Richard A.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield
Abstract :
We demonstrate and study a novel process for fabrication of GaAs-based self-aligned lasers based upon a single overgrowth. A lattice-matched n-doped InGaP layer is utilized for both electrical and optical confinements. Single-lateral-mode emission is demonstrated initially from an In0.17Ga0.83As double quantum well laser emitting ~980 nm. We then apply the fabrication technique to a quantum dot laser emitting ~1300 nm. Furthermore, we analyze the breakdown mechanism in our devices and discuss the limitations of index guiding in our structures.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; optical fabrication; optoelectronic devices; quantum dot lasers; quantum well lasers; GaAs; In0.17Ga0.83As; InGaP; device breakdown mechanism; electrical confinement; lattice-matched n-doped layer; optical confinement; optoelectronic confinement layer; quantum dot self-aligned stripe laser; quantum well laser; self-aligned laser fabrication; single-lateral-mode emission; Gallium arsenide; Indium phosphide; Optical device fabrication; Optical materials; Optical pumping; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Quantum well (QW) laser; semiconductor device fabrication; semiconductor laser;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2008.2011654
