DocumentCode :
1064340
Title :
High-Temperature Operation of 1.26- 
m Ridge Waveguide Laser With InGaAs Metamorphic Buffer on GaAs Substrate
Author :
Arai, Masakazu ; Nakashima, Kiichi ; Fujisawa, Takeshi ; Tadokoro, Takashi ; Kobayashi, Wataru ; Yuda, Masahiro ; Kondo, Yasuhiro
Author_Institution :
Nippon Telegraph & Telephone (NTT) Photonics Labs., NTT Corp., Atsugi
Volume :
15
Issue :
3
fYear :
2009
Firstpage :
724
Lastpage :
730
Abstract :
In this paper, we have newly developed an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapor-phase epitaxy, and realized a fully relaxed quasi-InGaAs substrate with low threading dislocation density. We have also successfully developed a 1.3-mu m-range ridge waveguide laser with InGaP upper cladding and InAlGaAs lower cladding layers. This laser has achieved the highest continuous-wave operating temperature (173degC) reported for a metamorphic laser. We measured the relaxation oscillation frequency from the relative intensity noise and undertook a 10-Gb/s direct modulation experiment.
Keywords :
MOCVD; dislocation density; gallium arsenide; indium compounds; semiconductor lasers; waveguide lasers; InGaAs; cladding layers; low threading dislocation density; metal-organic vapor-phase epitaxy; metamorphic buffer; ridge waveguide laser; temperature 173 degC; wavelength 1.26 micron; wavelength 1.3 micron; Epitaxial growth; Frequency measurement; Gallium arsenide; Indium gallium arsenide; Intensity modulation; Laser noise; Noise measurement; Substrates; Temperature; Waveguide lasers; InGaAs; laser; metamorphic; uncooled;
fLanguage :
English
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
1077-260X
Type :
jour
DOI :
10.1109/JSTQE.2008.2011564
Filename :
5068479
Link To Document :
