Optimizing the Operation of Terahertz Silicon Lasers

Author

Pavlov, Sergey G. ; Hübers, Heinz-Wilhelm ; Böttger, Ute ; Zhukavin, Roman Kh ; Tsyplenkov, Veniamin V. ; Kovalevsky, Konstantin A. ; Shastin, Valery N.

Author_Institution

German Aerosp. Center (DLR), Inst. of Planetary Res., Berlin

Volume

15

Issue

3

fYear

2009

Firstpage

925

Lastpage

932

Abstract

In this paper, a thorough characterization of terahertz silicon lasers with respect to doping concentration and operation temperature has been carried out. Several factors limiting the laser operation, such as heating of the laser crystal and absorption by photoinduced free carriers, are discussed. The optimal doping concentration has been determined. The influence of the pump geometry on the laser efficiency has been investigated. It was found that an external uniaxial force applied to the laser crystal lowers the pump threshold and increases the output power.

Keywords

elemental semiconductors; laser beams; optical materials; optical pumping; semiconductor lasers; silicon; submillimetre wave lasers; Si; laser crystal heating; laser pump threshold; optimal doping concentration; photoinduced free carrier absorption; terahertz silicon laser; Absorption; Doping; Geometrical optics; Heating; Laser excitation; Power generation; Power lasers; Pump lasers; Silicon; Temperature; Phonons; silicon (Si); stimulated emission;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2008.2011492

Filename

5068483