DocumentCode :
1064400
Title :
The V-groove multijunction solar cell
Author :
Chappell, Terry I.
Author_Institution :
IBM Thomas J. Watson Research Center, Yorktown Heights, NY
Volume :
26
Issue :
7
fYear :
1979
fDate :
7/1/1979 12:00:00 AM
Firstpage :
1091
Lastpage :
1097
Abstract :
A new type of silicon photovoltaic converter has been developed called the V-Groove Multijunction (VGMJ) solar cell. The VGMJ solar cell consists of an array of many individual diode elements connected in series to produce a high-voltage low-current output. All the elements of the cell are formed simultaneously from a single silicon wafer by V-groove etching. The results of detailed computer simulations predict a conversion efficiency in excess of 24 percent for this cell when it is operated in sunlight concentrated 100 or more times. The advantages of this cell over other silicon cells include the capability for greater than 20-percent conversion efficiency with only modest bulk carrier lifetimes, a higher open-circuit voltage, a very low series resistance, a simple one-mask fabrication procedure, and excellent environmental protection provided by a glass front surface.
Keywords :
Charge carrier lifetime; Computer simulation; Diodes; Etching; Low voltage; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation; Surface resistance;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19551
Filename :
1480129
Link To Document :
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