Title :
Equilateral-Triangle and Square Resonator Semiconductor Microlasers
Author :
Yang, Yue-De ; Huang, Yong-Zhen ; Che, Kai-Jun ; Wang, Shi-Jiang ; Hu, Yong-Hong ; Du, Yun
Author_Institution :
State Key Lab. on Integrated Optoelectron., Chinese Acad. of Sci., Beijing
Abstract :
The characteristics of equilateral-triangle resonator (ETR) and square resonator microlasers are reported, which are potential light sources in the photonic integrations. Based on the numerical simulations, we find that high-efficiency directional emission can be achieved for the triangle and square microlasers by directly connecting an output waveguide to the resonators. The electrically injected InP/InGaAsP ETR and square resonator microlasers with a 2-mum-wide output waveguide were fabricated by standard photolithography and inductively coupled plasma etching techniques. Room-temperature continuous-wave (CW) operations were achieved for the ETR microlasers with the side length from 10 to 30 mum and the square resonator microlasers with the side length of 20 mum. The output power versus CW injection current and the laser spectra are presented for an ETR microlaser up to 310 K and a square resonator microlaser to 305 K. The lasing spectra with mode wavelength intervals as that of whispering-gallery-type modes and Fabry-Parot modes are observed for two square lasers, which can lase at low temperature and room temperature, respectively.
Keywords :
Fabry-Perot resonators; III-V semiconductors; arsenic compounds; electro-optical devices; gallium compounds; indium compounds; integrated optics; laser cavity resonators; laser modes; micro-optics; numerical analysis; optical fabrication; photolithography; semiconductor lasers; spectral analysis; sputter etching; whispering gallery modes; ETR microlaser; Fabry-Parot mode; InP-InGaAsP; continuous-wave operation; electrically injected laser; equilateral-triangle resonator; laser spectra; light source; numerical simulation; optical waveguide fabrication; photolithography; photonic integration; plasma etching technique; size 10 mum to 30 mum; size 2 mum; square resonator semiconductor microlaser; temperature 293 K to 298 K; temperature 305 K; temperature 310 K; whispering-gallery-type mode; Indium phosphide; Joining processes; Laser modes; Light sources; Lithography; Numerical simulation; Plasma applications; Plasma temperature; Power lasers; Semiconductor waveguides; InP/InGaAsP; microlaser; microresonator; optical resonators; quality factors; semiconductor lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2008.2010236