Title :
Long-Wavelength GaInNAs Vertical-Cavity Surface-Emitting Laser With Buried Tunnel Junction
Author :
Onishi, Yutaka ; Saga, Nobuhiro ; Koyama, Kenji ; Doi, Hideyuki ; Ishizuka, Takashi ; Yamada, Takashi ; Fujii, Kosuke ; Mori, Hiroki ; Hashimoto, Jun-ichi ; Shimazu, Mitsuru ; Yamaguchi, Akira ; Katsuyama, Tsukuru
Author_Institution :
Transm. Devices R&D Labs., Sumitomo Electr. Ind. Ltd., Yokohama
Abstract :
A long-wavelength GaInNAs vertical-cavity surface-emitting laser with a buried tunnel junction (BTJ) has been demonstrated in this paper. It has been shown that a combination of a GaAs-based BTJ for a current confinement, GaInNAs multi-quantum wells for an active region, a dielectric distributed Bragg reflector (DBR) for a top mirror, and an AlGaAs/GaAs DBR for a bottom mirror is desirable to realize high-speed operation at high temperature. The maximum output power of 4.2 mW with a low resistance of 65 Omega has been obtained at 25degC. Operations of 10 Gb/s have been achieved over the temperature range of 25degC-85degC, with operation current of 6.9 mA and extinction ratio of 5.0 dB.
Keywords :
aluminium compounds; distributed Bragg reflectors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser beams; laser cavity resonators; laser mirrors; nitrogen compounds; semiconductor quantum wells; surface emitting lasers; thermo-optical effects; AlGaAs-GaAs; GaInNAs; bit rate 10 Gbit/s; buried tunnel junction; current 6.9 mA; dielectric distributed Bragg reflector; high-speed operation; laser mirror; multiquantum well; power 4.2 mW; resistance 65 ohm; temperature 25 degC to 85 degC; vertical-cavity surface-emitting laser; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Oxidation; Substrates; Surface emitting lasers; Surface resistance; Temperature; Thermal conductivity; Vertical cavity surface emitting lasers; GaInNAs; long wavelength (LW); tunnel junction; vertical-cavity surface-emitting laser (VCSEL);
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2008.2011495
