High frequency buried heterostructure 1.5 μm GaInAsP/InP lasers, grown entirely by metalorganic vapour phase epitaxy in two epitaxial growth steps

Author

Tanbun-Ek, T. ; Logan, R.A. ; van der Ziel, J.P.

Author_Institution

AT&T Bell Labs., Murray Hill, NJ

Volume

24

Issue

24

fYear

1988

fDate

11/24/1988 12:00:00 AM

Firstpage

1483

Lastpage

1484

Abstract

A new high frequency buried heterostructure laser is described and fabricated using two epitaxial growth steps, grown entirely by atmospheric pressure metalorganic vapour phase epitaxy. The lasers are made with non-re-entrant mesas with the active layer narrowed to 1-2 μm by a selective etch to ensure operation in the lowest order transverse mode. The regrowth with Fe doped semi-insulating InP fills in the etched slots adjacent to the active layer and planarises the structure. The non-re-entrant mesa eliminates the anomalous rapid growth in MOVPE at the edges of the re-entrant mesas. The lasers have thresholds of 20 mA and quantum efficiencies of 46% with good linearity up to 10 mW. The laser shows a small signal microwave bandwidth of 5.8 GHz at 5 mW

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.5 micron; 46 percent; 5 MW; 5.8 GHz; anomalous rapid growth; buried heterostructure; epitaxial growth steps; linearity; lowest order transverse mode; metalorganic vapour phase epitaxy; nonreentrant mesas; quantum efficiencies; selective etch; small signal microwave bandwidth;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

Filename

27916