DocumentCode
1064691
Title
Temperature behavior of ion-implanted ZnTe green LED´s
Author
Tissot, Jean-Luc ; Labrunie, Guy ; Marine, Jean
Author_Institution
L.E.T.I.-Commissariat a L´´Energie Atomique, Grenoble, France
Volume
26
Issue
8
fYear
1979
fDate
8/1/1979 12:00:00 AM
Firstpage
1202
Lastpage
1205
Abstract
Ion implantation in ZnTe has been used for fabricating a metal-insulator-semiconductor (MIS) injection device. These diodes present a double-injection behavior with a negative resistance at the injection threshold. In forward bias, a narrow (<80-Å) green (5500-Å) electroluminescence is produced. Diode brightness per unit current density is in the range of 300 cd . m-2/A . cm-2and varies linearly with the injected current in the case of efficient phosphorus-doped ZnTe. These characteristics are studied in the temperature range of -100°C to +100°C so as to determine the fundamental properties of the diodes.
Keywords
Aluminum; Boron; Crystalline materials; Ion implantation; Light emitting diodes; Luminescence; Metal-insulator structures; Semiconductor diodes; Temperature; Zinc compounds;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1979.19578
Filename
1480156
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