DocumentCode :
1064701
Title :
Investigations of electroluminescent junctions in ZnSe
Author :
Papadopoulo, Annie-Claire ; Ged, Philippe
Author_Institution :
Centre National D´´Etudes des Telecommunications, Bagneux, France
Volume :
26
Issue :
8
fYear :
1979
fDate :
8/1/1979 12:00:00 AM
Firstpage :
1206
Lastpage :
1209
Abstract :
Rectifying and electroluminescent structures have been obtained from n-type zinc selenide by various zinc vapor heat treatments. Diode characteristics and surface analysis of both treated and untreated samples yield results which indicate the possibility of a ZnSe p-n structure.
Keywords :
Annealing; Conductivity; Crystals; Electroluminescence; Etching; Insulation; Schottky diodes; Semiconductor diodes; Surface treatment; Zinc compounds;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19579
Filename :
1480157
Link To Document :
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