• DocumentCode
    1064701
  • Title

    Investigations of electroluminescent junctions in ZnSe

  • Author

    Papadopoulo, Annie-Claire ; Ged, Philippe

  • Author_Institution
    Centre National D´´Etudes des Telecommunications, Bagneux, France
  • Volume
    26
  • Issue
    8
  • fYear
    1979
  • fDate
    8/1/1979 12:00:00 AM
  • Firstpage
    1206
  • Lastpage
    1209
  • Abstract
    Rectifying and electroluminescent structures have been obtained from n-type zinc selenide by various zinc vapor heat treatments. Diode characteristics and surface analysis of both treated and untreated samples yield results which indicate the possibility of a ZnSe p-n structure.
  • Keywords
    Annealing; Conductivity; Crystals; Electroluminescence; Etching; Insulation; Schottky diodes; Semiconductor diodes; Surface treatment; Zinc compounds;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19579
  • Filename
    1480157