Carrier lifetime measurement in semiconductor lasers using injection current pulses of Gaussian shape

Author

Küsters, A. Mesquida ; Glade, M. ; Heime, K.

Author_Institution

Inst. fuer Halbleitertech., RWTH Aachen, Germany

Volume

28

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

2669

Lastpage

2673

Abstract

The transient optical response of InGaAsP-InP double heterostructure (DH) and InGaAs-InGaAsP separate confinement multiple quantum-well (SC-MQW) lasers emitting at 1.3 μm has been measured using injection current pulses up to 1.5 A of Gaussian shape supplied by an avalanche generator. The method is shown to apply even on broad-area Fabry-Perot cavity devices gives quick access on the dynamic characteristics of novel laser structures. The lasing continuity equation is solved for this type of injection pulse. The comparison of calculated and measured turn-on delay times yields a precise value of the effective carrier lifetime as applicable in very high-bit-rate digital transmission

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser variables measurement; semiconductor lasers; 1.3 micron; 1.5 A; Gaussian shape; IR; InGaAs-InGaAsP; InGaAsP-InP; avalanche generator; broad-area Fabry-Perot cavity devices; carrier lifetime measurements; double heterostructure; dynamic characteristics; injection current pulses; laser structures; lasing continuity equation; multiple quantum-well; semiconductor lasers; separate confinement; transient optical response; very high-bit-rate digital transmission; Carrier confinement; Charge carrier lifetime; DH-HEMTs; Optical pulse generation; Potential well; Pulse measurements; Quantum well lasers; Semiconductor lasers; Shape measurement; Stimulated emission;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.166456

Filename

166456