Title :
High-Sensitivity Temperature Measurement With Miniaturized InSb Mid-IR Sensor
Author :
Camargo, Edson Gomes ; Ueno, Koichiro ; Morishita, Tomohiro ; Sato, Masayuki ; Endo, Hidetoshi ; Kurihara, Masaaki ; Ishibashi, Kazutoshi ; Kuze, Naohiro
Author_Institution :
Asahi Kasei EMD Corp., Shizuoka
Abstract :
This paper reports the development and evaluation of an InSb photovoltaic infrared sensor (InSb PVS) operating at room temperature. The InSb PVS consists of 700 InSb p+ - p- - n+ photodiodes connected in series, on a semi-insulating GaAs (100) substrate. An Al0.17rIn0.83Sb barrier layer between p+ and p- layers was used to reduce diffusion of photo-excited electrons. Cutoff wavelength was 6.8 mum and output signal was almost linear with irradiance up to 0.6 mW/cm2. Sensitivity of 67 muV/K and noise equivalent temperature difference of 2.2 mK/Hz1/2 was obtained at room temperature, which shows the sensor to be a suitable for noncontact thermometry.
Keywords :
III-V semiconductors; antimony compounds; indium compounds; infrared detectors; photodetectors; temperature measurement; temperature sensors; high-sensitivity temperature measurement; miniaturized sensor; noise equivalent temperature difference; noncontact thermometry; photo-excited electrons; photovoltaic infrared sensor; Gallium arsenide; Infrared detectors; Infrared sensors; Molecular beam epitaxial growth; Photodiodes; Photovoltaic systems; Pyroelectricity; Solar power generation; Temperature measurement; Temperature sensors; Indium antimonide; infrared sensor; miniaturized; photovoltaic; temperature measurement;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2007.902948
