Title :
Magnetic properties of ternary Fe-rich rare earth intermetallic compounds
Author :
Buschow, K.H.J. ; de Mooij, D.B. ; Brouha, M. ; Smit, H. H A ; Thiel, R.C.
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
fDate :
3/1/1988 12:00:00 AM
Abstract :
The crystal structure and the magnetic properties are determined for several novel ternary intermetallic compounds of the type RFe10T2, where R represents Ti, V, Cr, Mo, W, or Si. All these compounds show a strong ferromagnetic behavior, with Curie temperatures in the range 350 K to 600 K. The magnetic and crystallographic properties of the RFe10T2 compounds are discussed together with the properties of 3d-rich ternary compounds of different composition and structure. Special attention is paid to the magnetocrystalline anisotropy of these materials, consisting of contributions of the R sublattice and the Fe sublattice. Detailed information on the crystal-field-induced contribution of the former sublattice is derived from 155Gd Mossbauer spectroscopy performed on the Gd compounds of these series, since the 155Gd nucleus can be regarded as a sensitive probe of the electric field gradient at the nuclear site produced by the electric charges of the surrounding ions. It can be shown that this electric field gradient is proportional to the second order crystal field parameter A02, which in turn determines the magnetocrystalline anisotropy of the R sublattice.
Keywords :
Curie temperature; Mossbauer effect; crystal atomic structure of alloys; crystal field interactions; ferromagnetic properties of substances; iron alloys; magnetic anisotropy; 350 to 600 K; 155Gd Mossbauer spectroscopy; Curie temperatures; Fe; crystal field parameter; crystal structure; electric field gradient; ferromagnetic; magnetocrystalline anisotropy; Anisotropic magnetoresistance; Chromium; Crystalline materials; Crystallography; Intermetallic; Magnetic anisotropy; Magnetic materials; Magnetic properties; Perpendicular magnetic anisotropy; Temperature distribution;
Journal_Title :
Magnetics, IEEE Transactions on