Title :
A high-efficiency 50 GHz InGaAs multimode waveguide photodetector
Author :
Kato, Kazutoshi ; Hata, Susumu ; Kawano, Kenji ; Yoshida, Junichi ; Kozen, Atsuo
Author_Institution :
NTT Opto-electron. Lab., Kanagawa, Japan
fDate :
12/1/1992 12:00:00 AM
Abstract :
A side-illuminated p-i-n photodetector with a multimode waveguide structure is proposed. Numerical and experimental results show that higher-order mode lights greatly enhance the coupling efficiency between the waveguide photodetector (WGPD) and a fiber, which leads to a high external quantum efficiency. The multimode WGPD has the major advantage that the external quantum efficiency and bandwidth can be derived independently of each other because the multimode waveguide structure can be designed without deteriorating electrical properties. The fabricated WGPD has an external quantum efficiency of 56% without AR coating and 68% with AR coating, and an electrical frequency 3 dB greater than 50 GHz at a 1.55-μm wavelength
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; p-i-n diodes; photodetectors; photodiodes; 1.55 micron; 50 GHz; 56 percent; AR coating; IR; InGaAs; coupling efficiency; fibre coupling; high external quantum efficiency; high-efficiency; higher-order mode lights; multimode waveguide photodetector; semiconductors; side-illuminated p-i-n photodetector; Bandwidth; Coatings; Frequency; Indium gallium arsenide; Indium phosphide; Optical coupling; Optical fiber communication; Optical surface waves; Optical waveguides; Photodetectors;
Journal_Title :
Quantum Electronics, IEEE Journal of
