Title :
On the I-V characteristics of floating-gate MOS transistors
fDate :
9/1/1979 12:00:00 AM
Abstract :
The effects of capacitive coupling on the I-V characteristics of floating-gate MOS transistors are described. A set of modified IV equations for these devices is presented and compared with experimental results.
Keywords :
Capacitance; Computational fluid dynamics; Conductivity; Equations; Intrusion detection; MOSFETs; Nonvolatile memory; Semiconductor memory; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1979.19595
