• DocumentCode
    1064901
  • Title

    Effects of CVD oxide on phosphorus-diffused emitters in silicon

  • Author

    Koji, Tetsu ; Tseng, Wen F. ; Mayer, James W. ; Suganuma, Tohru

  • Author_Institution
    Nippon Electric Company, Ltd., Kawasaki, Japan
  • Volume
    26
  • Issue
    9
  • fYear
    1979
  • fDate
    9/1/1979 12:00:00 AM
  • Firstpage
    1310
  • Lastpage
    1312
  • Abstract
    Contact windows on phosphorus-diffused emitters have been made in layers of SiO2obtained by either thermal growth or CVD. Transistors with CVD oxide show a current gain which is 20 to 50 percent higher than that of transistors made with thermal oxide. TEM studies revealed stacking faults in the emitter region of transistors with CVD oxide, but dislocations for those with thermal oxide. We attribute the difference in current gain to the different crystallographic defect types in the neutral region of the emitter.
  • Keywords
    Bipolar transistors; Crystallography; Current measurement; Fabrication; Gain measurement; Helium; Metallization; Oxidation; Silicon; Stacking;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19599
  • Filename
    1480177
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1064901