• DocumentCode
    1064902
  • Title

    Thermal stress in semiconductor encapsulating materials

  • Author

    Van Den Bogert, Willem F. ; Belton, Daniel J. ; Molter, Michael J. ; Soane, David S. ; Biernath, Rolf W.

  • Author_Institution
    Philips Res. Lab., Sunnyvale, CA, USA
  • Volume
    11
  • Issue
    3
  • fYear
    1988
  • Firstpage
    245
  • Lastpage
    252
  • Abstract
    To examine molding-compound-induced stresses, and to determine the influence of the time-dependent and temperature-dependent thermomechanical properties of the molding compound, a linear viscoelastic analysis has been applied to a simple bilayer structure. Stress generation is examined over the temperature range from -150 degrees C to the molding temperature (180 degrees C), based on a complete consideration of the thermomechanical properties of a molding compound. Stress calculations are compared to experimentally determined radii of curvature of the bilayer structure as a function of temperature. Both calculated and experimental results demonstrate the necessity to consider a complete materials description in order to adequately describe stress generation. The importance of the viscoelastic contribution of the transition range and the temperature-dependent elastic contribution of the glassy state to stress generation are highlighted.<>
  • Keywords
    encapsulation; thermal stresses; viscoelasticity; -150 to 180 degC; bilayer structure; complete materials description; glassy state; linear viscoelastic analysis; molding-compound-induced stresses; semiconductor encapsulating materials; temperature-dependent elastic contribution; temperature-dependent thermomechanical properties; transition range; viscoelastic contribution; Elasticity; Electronic packaging thermal management; Iron; Passivation; Residual stresses; Semiconductor materials; Temperature; Thermal expansion; Thermal stresses; Viscosity;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/33.16648
  • Filename
    16648