Title :
High Injection Efficiency and Low-Voltage Programming in a Dopant-Segregated Schottky Barrier (DSSB) FinFET SONOS for nor-type Flash Memory
Author :
Choi, Sung-Jin ; Han, Jin-Woo ; Jang, Moon-Gyu ; Kim, Jin Soo ; Kim, Kwang Hee ; Lee, Gi Sung ; Oh, Jae Sub ; Song, Myeong Ho ; Park, Yun Chang ; Kim, Jeoung Woo ; Choi, Yang-Kyu
Author_Institution :
Div. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon
fDate :
3/1/2009 12:00:00 AM
Abstract :
A dopant-segregated Schottky barrier (DSSB) FinFET silicon-oxide-nitride-oxide-silicon (SONOS) for nor-type flash memory is successfully demonstrated. Compared with a conventional FinFET SONOS device, the DSSB FinFET SONOS device exhibits high-speed programming at low voltage. The sharp dopant-segregated Schottky contact at the source side can generate hot electrons, and it can be used to provide high injection efficiency at low voltage without any constraint on the choice of the proper gate and drain voltage. The DSSB FinFET SONOS device is therefore a promising candidate for nor-type flash memory with high-speed and low-power programming.
Keywords :
MOSFET; Schottky barriers; elemental semiconductors; flash memories; silicon; FinFET SONOS; NOR-type flash memory; Si; dopant-segregated Schottky barrier; high injection efficiency; hot electrons; low-voltage programming; silicon-oxide-nitride-oxide-silicon; Dopant-segregated; FinFET; NOR Flash; Schottky barrier; hot electrons; nonvolatile memory; silicon–oxide–nitride–oxide–silicon (SONOS); source-side injection;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2008.2010720
