Substrate current in GaAs MESFET´s

Author

Eastman, L.F. ; Shur, M.S.

Author_Institution

Cornell University, Ithaca, NY

Volume

Issue

fYear

1979

fDate

9/1/1979 12:00:00 AM

Firstpage

1359

Lastpage

1361

Abstract

It is shown that the substrate current in GaAs MESFET\´s may be related to the electron injection into the substrate region adjacent to the high-field domain in the active layer. A simple one-dimensional calculation shows that the substrate current Isubis proportional to $V\\min{ds}\\max {1/2}$ and $n\\min{0}\\max {1/4}$ where Vdsis the drain-to-source voltage, n0is the doping density in the active layer. At $n_{0} = 10^{17}$ cm^-3and $V_{ds} \\simeq 10$ V we estimate $I_{sub} \\sim 50$ mA per millimeter gate in good agreement with experimental results.

Keywords

Computer simulation; Current density; Doping; Electrons; Electrostatics; FETs; Gallium arsenide; MESFETs; Poisson equations; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1979.19606

Filename

1480184

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1064967