DocumentCode
1064984
Title
Continuous operation of high-power (200 mW) strained-layer Ga1-xInxAs/GaAs quantum-well lasers with emission wavelengths 0.87⩽λ⩽0.95 μm
Author
Stutius, W. ; Gavrilovic, P. ; Williams, J.E. ; Meehan, Kevin
Author_Institution
Microelectron. Lab., Polaroid Corp., Cambridge, MA
Volume
24
Issue
24
fYear
1988
fDate
11/24/1988 12:00:00 AM
Firstpage
1493
Lastpage
1494
Abstract
Separate confinement single-quantum-well lasers with 100-120 Å-thick strained Ga1-xInxAs/GaAs active layers have been grown on (100) GaAs substrates by metalorganic chemical vapour deposition. Ten-stripe proton-implanted arrays with 90 μm-wide aperture and 250 μm cavity length emit 200 mW CW optical power at wavelengths 0.87⩽λ⩽0.95 μm. Lifetest data on an uncoated device emitting 90 mW/facet at 50°C and λ=0.95 μm suggest a mean-time-to-failure in excess of 2500 h at room temperature. The performance of lasers with strained Ga1-xInxAs quantum wells is comparable to that of unstrained AlxGa1-xAs/GaAs quantum-well lasers without facet coating
Keywords
CVD coatings; III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 0.87 to 0.95 micron; 200 MW; CW optical power; Ga1-xInxAs-GaAs; aperture; cavity length; emission wavelengths; life test; mean-time-to-failure; metalorganic chemical vapour deposition; proton-implanted arrays; room temperature; single-quantum-well lasers; uncoated device;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
27923
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