Impact of Current Flow Shape in Tapered (Versus Rectangular) FinFET on Threshold Voltage Variation Induced by Work-Function Variation

Author

Hyohyun Nam ; Changhwan Shin

Author_Institution

Sch. of Electr. & Comput. Eng., Univ. of Seoul, Seoul, South Korea

Volume

61

Issue

6

fYear

2014

fDate

Jun-14

Firstpage

2007

Lastpage

2011

Abstract

Depending on the real fin shape in a FinFET (i.e., rectangular versus tapered fin), the impact of the current flow shape in both rectangular and tapered FinFETs on threshold voltage variation induced by work-function variation is investigated by performing extensive 3-D TCAD simulations. It is found that if a FinFET has two independent (versus single and bulky) current flow in the channel, the extended gate area should be (should not be) included in calculating the ratio of average grain size to gate area (RGG) to agree with a previously validated FinFET RGG plot. Depending on the current flow shape in a FinFET, the RGG calculation should be refined.

Keywords

MOSFET; semiconductor device models; technology CAD (electronics); work function; 3D TCAD simulations; current flow shape; extended gate area; grain size; real fin shape; rectangular fin; tapered FinFET; tapered fin; threshold voltage variation; work function variation; work-function variation; CMOS integrated circuits; CMOS technology; FinFETs; Grain size; Logic gates; Shape; Solid modeling; CMOS; Characterization; FinFET; MOSFET; ratio of average grain size to gate area (RGG); variability; work-function variation (WFV); work-function variation (WFV).;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2318696

Filename

6810781