• DocumentCode
    1065008
  • Title

    A model for excess noise of semiconducting BaSrTiO3

  • Author

    Ambrózy, A.

  • Author_Institution
    Technical University of Budapest, Budapest, Hungary
  • Volume
    26
  • Issue
    9
  • fYear
    1979
  • fDate
    9/1/1979 12:00:00 AM
  • Firstpage
    1368
  • Lastpage
    1369
  • Abstract
    Measurements on semiconducting BaSrTiO3showed that this material exhibits a high 1/f excess noise. The model described here attributes this high excess noise to grain boundaries. The small volume and the depletion of the contact spots may justify the noise levels observed.
  • Keywords
    Phased arrays; Photovoltaic systems; Radiative recombination; Semiconductivity; Semiconductor device noise; Semiconductor materials; Silicon; Solar power generation; Temperature distribution; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19610
  • Filename
    1480188
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1065008