• DocumentCode
    1065018
  • Title

    Design and development of high-power microwave silicon BARITT diodes

  • Author

    Ahmad, S. ; Freyer, J.

  • Author_Institution
    Central Electronics Engineering Research Institute, Pilani, Rajasthan, India
  • Volume
    26
  • Issue
    9
  • fYear
    1979
  • fDate
    9/1/1979 12:00:00 AM
  • Firstpage
    1370
  • Lastpage
    1373
  • Abstract
    A method of design and fabrication for high-power high-frequency silicon BARITT diodes is described. Pt-Schottky BARITT structure developed in this study yielded the largest pf2product reported so far. Very good agreement between the theoretically calculated and expeximentally measured values of the reachthrough voltages and the optimum frequency of operation were observed. This proves the validity of the basic assumption used in the design calculations.
  • Keywords
    Design methodology; Electromagnetic heating; Fabrication; Frequency; Light emitting diodes; Oscillators; Power generation; Schottky diodes; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1979.19611
  • Filename
    1480189
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1065018