DocumentCode :
1065018
Title :
Design and development of high-power microwave silicon BARITT diodes
Author :
Ahmad, S. ; Freyer, J.
Author_Institution :
Central Electronics Engineering Research Institute, Pilani, Rajasthan, India
Volume :
26
Issue :
9
fYear :
1979
fDate :
9/1/1979 12:00:00 AM
Firstpage :
1370
Lastpage :
1373
Abstract :
A method of design and fabrication for high-power high-frequency silicon BARITT diodes is described. Pt-Schottky BARITT structure developed in this study yielded the largest pf2product reported so far. Very good agreement between the theoretically calculated and expeximentally measured values of the reachthrough voltages and the optimum frequency of operation were observed. This proves the validity of the basic assumption used in the design calculations.
Keywords :
Design methodology; Electromagnetic heating; Fabrication; Frequency; Light emitting diodes; Oscillators; Power generation; Schottky diodes; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1979.19611
Filename :
1480189
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1065018
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