DocumentCode :
1065030
Title :
Negative Differential Resistance in Buried-Channel 
pMOSFETs
Author :
Liu, En-Shao ; Kelly, David Q. ; Donnelly, Joseph P. ; Tutuc, Emanuel ; Banerjee, Sanjay K.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas, Austin, TX
Volume :
30
Issue :
2
fYear :
2009
Firstpage :
136
Lastpage :
138
Abstract :
We study the device characteristics of Si-capped GexC1-x pMOSFETs from room temperature down to 77 K. The output characteristics of these devices reveal a negative differential resistance (NDR) at temperatures below 150 K. Our measurements indicate a higher effective carrier mobility in the buried-channel GexC1-x with respect to the Si-reference sample, which suggests that the observed NDR is due to real-space transfer of hot holes from the higher mobility GexC1-x channel layer into the lower mobility Si cap layer.
Keywords :
MOSFET; germanium compounds; negative resistance; GexC1-x; Si-reference sample; buried-channel pMOSFET; negative differential resistance; real-space transfer; temperature 293 K to 298 K; temperature 77 K; Charge traps; germanium (Ge); germanium/carbon alloy $( hbox{Ge}_{x}hbox{C}_{1 - x})$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.2009364
Filename :
4749295
Link To Document :
